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Moreover, when the wiring steel movie situated outside the groove is all removed, the wiring metal film could also be agglomerated. Moreover, it shall be appreciated that after formation of the movie the wiring metallic movie thickness in the area outside the groove could also be made thinner than one in the groove, or the wiring metallic movie outside the groove could also be eliminated by a sure course of. The explanation why Nb is used for a substrate for Cu is that Nb has a high barrier characteristic against Cu and Nb has a superior adhesion in an interface between Cu and Nb, Aluminum single wire so that the agglomeration shouldn't be more likely to occur on Nb and thus the Cu on the flat BPSG region can be successfully moved into the groove. In any of above circumstances, the crystal seed formed by agglomeration of the first thin film was stuffed into the groove and an in-aircraft rotation for the crystal grains is controlled in the identical method as in the straight-line grooves, so that the reliability of interconnection formed was improved. By this fact, it is clearly indicated that the further most popular orientation is effected in a way where the primary Al movie is separated in order to form a crystal seed (though not shown) and the second Al movie is grown primarily based on the crystal seed.

Moreover, the identical issues described in the primary and second embodiments are applicable to the third embodiment right here with regard to the angle of bottom face with respect to the aspect face, the angle of bent portion of the interconnection, and the strategy to remove the residual wiring steel. Then, a shape for the mask pattern 13 is formed such that a plurality of straight-line-formed grooves are organized in parallel periodically. With reference to FIG. 12D, on the thermal oxide film 12 in which the grooves have been formed by a patterning described above, a primary Al film 14 whose purity is more than 99.999% was deposited on the thickness of 20 nm at a room temperature by way of the d.c. Next, with reference to FIG. 17C, an Al thin film was formed on the C movie 24 sequentially by the d.c. On the Si substrate, the Al thin film 87 with a thickness of 0.4 .mu.m was formed by the d.c.

Then, the thickness of the C film was various at 0.2 .mu.m. Thereafter, with reference to FIG. 12C, etching was carried out on the thermal oxide movie at a thickness of 50 nm utilizing the RIE so as to type the groove, and the resist was eliminated. Then, the sputtering was carried out under the identical condition as within the formation of the primary Al skinny film. Thereafter, with reference to FIG. 13B, retaining the state of the above background pressure (particularly the above vacuum stage) and of suppressing the formation of the native oxide film on the floor of the Al crystal seed, a second Al thin movie sixteen was formed on the thickness of 380 nm by the sputtering. The wettability of fabric is decided by the steadiness among a surface tension and interfacial tension of the fabric. Conversely, there could also be employed an structure where there may be used a material which comparatively deteriorates the wettability as a wettability deteriorating layer in comparison with the inside surface of the groove and which is formed in other area than the inner surface of the groove. Ar was the gasoline that was utilized within the sputtering, the background stress was less than 10.sup.-8 Torr, the pressure through the sputtering was 3.instances.10.sup.-Three Torr, and the utilized power was 6 KW, in order to form the Al film while suppressing the formation of the native oxide movie on the Al floor.

Ar was a gasoline that was utilized in the sputtering, the background stress was lower than 10.sup.-8 Torr, the pressure beneath sputtering was 3.occasions.10.sup.-Three Torr, and the utilized energy was 6 KW. The pressure at the time of etching was managed at forty mTorr, and the applied energy at the time of etching was 800 W. The residual resist was eliminated in an environment of oxygen plasma. Thus the sprucing was stopped by the point when removing of the residual Al within the flat portion was accomplished, in order that the floor of the Al interconnection was not polished more than what is necessary After sprucing, still remaining C movie 24 was eliminated in an O.sub.2 plasma. Thereafter, when there's grown the native oxide movie on the floor thereof, it's most popular to carry out a course of to take away the native oxide movie. Thereafter, Al which was left behind in a wide-vary area the place a wiring sample was not formed was removed by a chemical mechanical sprucing technique. Thereafter, cleansing is carried out in mixture liquid of sulfuric acid and hydrogen peroxide water. With reference to FIG. 18, it's well-known that liquid materials B placed on solid materials A turns into a spherical form beneath a state of thermal equilibrium.